In a potential turning point for microelectronics, scientists in Tokyo have crafted a powerful new transistor that ditches silicon in favor of a crystalline material called gallium-doped indium oxide. Engineered with a gate-all-around design—where the transistor’s control gate wraps completely around the current channel—this tiny device achieves remarkable electron mobility and long-term stability. The result? […]



Summary

Scientists in Tokyo have developed a high-performance transistor using gallium-doped indium oxide instead of traditional silicon. Its key innovation is a "gate-all-around" design, where the control gate encircles the current channel. This revolutionary architecture boosts electron mobility and enhances long-term stability, offering significant improvements over existing silicon-based transistors. [Remaining words for concluding statement pending further content provided.]

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